If, there is not a datasheet which searches, request. Derate above 25c operating and storage temperature range. Operating and storage junction temperature range tj, tstg. Sep 26, 2019 spp17n80c3 spa17n80c3 cool mos power transistor vds. Unit reference section reference output voltage vref tj 25c, iref 1ma 5. Unless otherwise specified in this data sheet, this product is a standard commercial. Smk630f advanced nch power mosfet g d pin connection s to220f3l s g d dcdc converter application high voltage switching applications features high voltage. Ambient note 1 r ja 200 cw thermal resistance, junction. Pdf 2n7000 2n7000a 2n7000k 70max 45max 55max 80max 9n90c 9n50c igbt 20n50 kmb050n60p 7n65c 5n50c smd diode s4 58a 2n60 mosfet smps 2n60c str tv smps. This datasheet is subject to change without notice. Dec 08, 2019 the ibm system storage san48b5 switch is designed to meet the demands of hyperscale private or hybrid cloud storage environments by delivering 16 gbps fibre channel technology and capabilities that support highly virtualized environments.
Nov 18, 2015 30g122 datasheet pdf toshiba, gt30g122 datasheet 400v, 120a igbt 30g122 datasheet, 30g122 pdf, 30g122 pinout, 30g122 data, circuit, ic, manual. Mtw20n50e power mosfet 20 amps, 500 volts datasheet catalog. H5n3011p silicon n channel mos fet high speed power switching rej03g03850200 rev. To ensure your services stay robust, pure service orchestrator selfheals protecting you against issues such as node failure and array performance or capacity limits. If the checkbox is invisible, the corresponding document cannot be downloaded in batch. Distributors are genuine parts, have full traceability, meet fairchilds quality standards for handing and storage and provide access to fairchilds. Monolithic linear ic la78045 tv and crt display vertical support. Rev1216 pinnacle alloys are products of sowesco sowesco, llc. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute ratings limiting values symbol parameter value unit vrrm repetitive peak reverse voltage 300 v ifrms rms forward voltage 80 a ifav average forward current 40 a ifrm repetitive peak forward current f 200khz, tp 500ns sinusoidal waveform 120 a tstg storage temperature range 65. S ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 18n50lta3t 18n50gta3t to220 g d s tube 18n50ltf1t 18n50gtf1t to220f1 g d s tube 18n50ltf2t 18n50gtf2t to220f2 g d s tube. In addition, this advanced power mosfet is designed to withstand high energy in the avalanche and commutation modes. Oct 01, 2015 y2010dn datasheet pdf, y2010dn datasheet, y2010dn pdf, y2010dn pinout, y2010dn data, circuit, ic, manual, substitute, parts, schematic, reference. Id l high speed power switching l hard switched and high frequency circuits 650v 155m 22a l leadfree benefits d l ultra low gate charge qg results in simple. Datasheet contains the design specifications for product development. Power mosfet 20 amps, 500 volts nchannel to247 this high voltage mosfet uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. Sound processors for boom box minicomponent stereo.
Thermal resistance symbol parameter value unit rthjcase thermal resistance junctioncase max to220d. For example, pure service orchestrator helps prevent accidental data corruption by ensuring a storage volume is bound to a single persistent volume claim at any given time. The ibm system storage san48b5 switch is designed to meet the demands of hyperscale private or hybrid cloud storage environments by delivering 16 gbps fibre channel technology and capabilities that support highly virtualized environments. On semiconductor 9n50c mosfet are available at mouser electronics. Data sheet pure storage flasharrayx accelerate core applications and provide a modern data experience. Qg,typ 31 nc product summary type package marking spa06n80c3 pgto2203 06n80c3 rev. Ymn datasheet pdf schottky barrier rectifier fairchild. The datasheet is printed for reference information only. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Supplier of active, passive and electromechanical electronic components.
Sound processors for boom box minicomponent stereo single power supply sound processors with builtin pre amplifier for tape recording and play back with integrated 23 band equalizer bd3401ks2,bd3402ks2 description the sound processor with builtin recordplay functions for cassette players, is suited for sound quality products such as. Spp17n80c3 spa17n80c3 cool mos power transistor vds. Toshiba field effect transistor silicon n channel mos type. Thermal data symbol parameter value unit rthjcase thermal resistance junctioncase max 0. Storage temperature 65 c to 150 c lead temperature 10 sec 300 c parameter value operating supply voltage 4. C electrical characteristics t c25c, unless otherwise noted parameter symbol test conditions min typ max unit off characteristics drainsource breakdown voltage bv dss i d250a, v gs0v 500 v drainsource leakage current i dss v ds500v, v gs0v 1 a. Id l high speed power switching l hard switched and high frequency circuits 650v 155m 22a l leadfree benefits d l ultra low gate charge. Ic 1n4007 kf12n60 diode 400v 4a to220is 1n4007 diode bridge mb6s mje05 df06 ic kfn50 text. Sr502 sr506 high current schottky barrier rectifier features a b a c d do201ad dim min max a 25. Maximum lead temperature for soldering purposes, 18 from case for 5 seconds. Source absolute maximum ratings ta 25c item symbol ratings unit drain to source voltage vdss 300 v gate to.